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K2993 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SK2993 - Toshiba Semiconductor

भाग संख्या K2993
समारोह 2SK2993
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=K2993?> डेटा पत्रक पीडीएफ

K2993 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics S
ymbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs| V
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 250 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 10 A
DS = 10 V, ID = 10 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 200 V, VGS = 10 V, ID = 20 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics S
Continuous drain reverse current
(Not e 1)
Pulse drain reverse current
(Not e 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
ymbol
Test Condition
IDR
IDRP
VDSF
trr
Qrr
IDR = 20 A, VGS = 0 V
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SK2993
Min Typ.
——
——
250 —
1.5 —
— 82
10 20
4000
— 300
— 1000
Max
±10
100
3.5
105
Unit
µA
µA
V
V
m
S
pF
15 —
— 35 —
ns
— 30 —
— 180 —
— 100 —
— 70 — nC
— 30
Min Typ. Max Unit
— — 20 A
— — 60
— 3.
2.0
300 —
3—
A
V
ns
µC
2 2002-01-25

विन्यास 6 पेज
डाउनलोड[ K2993 Datasheet.PDF ]


शेयर लिंक


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