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IRF542 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFETs - Harris

भाग संख्या IRF542
समारोह N-Channel Power MOSFETs
मैन्युफैक्चरर्स Harris 
लोगो Harris लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF542?> डेटा पत्रक पीडीएफ

IRF542 pdf
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF540, RF1S540,
RF1S540SM
IRF541
IRF542
IRF543
UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . .
TC = 100oC . . . . . . . . . . . . . . . . . . . .
...
...
...........
...........
.
.
ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . .
100
100
28
20
110
±20
150
1
80 100 80 V
80 100 80 V
28 25 25 A
20 17 17 A
110 100 100 A
±20 ±20 ±20 V
150 150 150 W
1 1 1 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
230
-55 to 175
300
260
230
-55 to 175
230
-55 to 175
230
-55 to 175
300 300 300
260 260 260
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF540, IRF542,
RF1S540, RF1S540SM
BVDSS ID = 250µA, VGS = 0V (Figure 10)
100 - - V
IRF541, IRF543
80 - - V
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF540, IRF541,
RF1S540, RF1S540SM
VGS(TH) VGS = VDS, ID = 250µA2
IDSS VDS = Rated BVDSS, VGS = 0V
VDS
TJ =
= 0.8 x
150oC
Rated
BVDSS,
VGS
=
0V
ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V
(Figure 7)
-4 V
- - 25 µA
- - 250 µA
28 - - A
IRF542, IRF543
25 - - A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF540, IRF541,
RF1S540, RF1S540SM
IGSS VGS = ±20V
rDS(ON) ID = 17A, VGS = 10V (Figures 8, 9)
- - ±100 nA
- 0.060 0.077
IRF542, IRF543
- 0.080 0.100
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs VDS 50V, ID = 17A (Figure 12)
8.7 13
-
td(ON) VDD = 50V, ID 28A, RG 9.1, RL = 1.7
-1 5 23
(Figures 17, 18) MOSFET Switching Times are
tr Essentially Independent of Operating
- 70 110
td(OFF) Temperature
-4 0 60
tf -5 0 75
Qg(TOT) VGS = 10V, ID = 28A, VDS = 0.8 x Rated
-3 8 59
BVDSS, Ig(REF) = 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Op-
Qgs erating Temperature
-8
-
Qgd
-2 1
-
S
ns
ns
ns
ns
nC
nC
nC
5-2

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