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IRF540 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRF540
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF540?> डेटा पत्रक पीडीएफ

IRF540 pdf
IRF540, SiHF540
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMB
OL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on) V
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
GS = 10 V
ID = 17 Ab
VDS = 50 V, ID = 17 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss -
Crss -
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs --
Qgd --
VGS = 10 V
ID = 17 A, VDS = 80 V,
see fig. 6 and 13b
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off) -5
tf -4
VDD = 50 V, ID = 17 A
Rg = 9.1 , RD = 2.9, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
MIN.
100
-
2.0
-
-
-
--
8.7
-
--
-1
-4
-4
-7
TYP. MAX. UNIT
- -V
0.13 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
0.077
- -S
1700
560
120
1
4
3
3
.5
-
-
-
72
11
32
-
-
-
-
-
.5 -
pF
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-- 28
A
- - 110
Body Diode Voltage
VSD
TJ = 25 °C, IS = 28 A, VGS = 0 Vb
--
2.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb
-
180 360 ns
Qrr - 1.3 2.8 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91021
S11-0510-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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