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2N7002A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या 2N7002A
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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2N7002A pdf
2N7002A
Marking Information
MN1
Date Code Key
Year
Code
Month
Code
Chengdu A/T Site
2008
V
Jan
1
2009
W
Feb Mar
23
MN1
MN1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site
2010
X
Apr
4
2011
Y
May Jun
56
2012
Z
2013
A
Jul Aug Sep
78 9
2014
B
2015
C
Oct Nov Dec
OND
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +85°C
TA = +100°C
TA = +25°C
TA = +85°C
TA = +100°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Value
60
±20
180
130
115
220
160
140
0.5
800
Units
V
V
mA
mA
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
PD
RθJA
RθJC
TJ, TSTG
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
Value
370
540
348
241
91
-55 to +150
Units
mW
°C/W
°C
2N7002A
Document number: DS31360 Rev. 12 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
Free Datasheet http://www.Datasheet4U.com

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