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IRG7R313UPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PDP Trench IGBT - International Rectifier

भाग संख्या IRG7R313UPBF
समारोह PDP Trench IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG7R313UPBF?> डेटा पत्रक पीडीएफ

IRG7R313UPBF pdf
IRG7R313UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
Collector-to-Emitter Breakdown Voltage
ΔΒVCES/ΔTJ Breakdown Voltage Temp. Coefficient
VCE(on)
Static Collector-to-Emitter Voltage
VGE(th)
Gate Threshold Voltage
330 ––– ––– V VGE = 0V, ICE = 250μA
––– 0.4 ––– V/°C Reference to 25°C, ICE = 1mA
––– 1.21 1.45
eVGE = 15V, ICE = 12A
––– 1.35 –––
eVGE = 15V, ICE = 20A
e1.75 ––– V VGE = 15V, ICE = 40A
––– 2.14 –––
eVGE = 15V, ICE = 60A
––– 1.41 –––
eVGE = 15V, ICE = 20A, TJ = 150°C
2.2 ––– 4.7 V VCE = VGE, ICE = 1.0mA
ΔVGE(th)/ΔTJ Gate Threshold Voltage Coefficient
ICES Collector-to-Emitter Leakage Current
IGES
gfe
Qg
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
tst
EPULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
ESD
Human Body Model
Machine Model
––– -10 ––– mV/°C
––– 1.0 10
VCE = 330V, VGE = 0V
25 150 μA VCE = 330V, VGE = 0V, TJ = 125°C
––– 75 –––
VCE = 330V, VGE = 0V, TJ = 150°C
––– ––– 100 nA VGE = 30V
––– ––– -100
VGE = -30V
––– 47 ––– S VCE = 25V, ICE = 12A
e––– 33 ––– nC VCE = 240V, IC = 12A, VGE = 15V
––– 12 –––
––– 1.0 –––
IC = 12A, VCC = 196V
––– 13 ––– ns RG = 10Ω, L=210μH
––– 65 –––
TJ = 25°C
––– 68 –––
––– 11 –––
IC = 12A, VCC = 196V
––– 14 ––– ns RG = 10Ω, L=200μH, LS= 150nH
––– 86 –––
TJ = 150°C
––– 190 –––
100 ––– ––– ns VCC = 240V, VGE = 15V, RG= 5.1Ω
––– 480 –––
L = 220nH, C= 0.20μF, VGE = 15V
μJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
––– 570 –––
L = 220nH, C= 0.20μF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 1C
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
LC Internal Collector Inductance
––– 880 –––
––– 47 –––
––– 26 –––
––– 4.5 –––
VGE = 0V
pF VCE = 30V
ƒ = 1.0MHz
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 7.5 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle = 0.05, ton=2μsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width 400μs; duty cycle 2%.
2
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