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IRFP22N50APBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - IRF

भाग संख्या IRFP22N50APBF
समारोह Power MOSFET
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
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<?=IRFP22N50APBF?> डेटा पत्रक पीडीएफ

IRFP22N50APBF pdf
IRFP22N50APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500 ––– –––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.55 –––
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.23
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
IDSS Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
Dynamic @ TJ = 25°C (unless otherwise specified)
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA†
VGS = 10V, ID = 13A „
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Avalanche Characteristics
12 ––– –––
––– ––– 120
––– ––– 32
––– ––– 52
––– 26 –––
––– 94 –––
––– 47 –––
––– 47 –––
––– 3450 –––
––– 513 –––
––– 27 –––
––– 4935 –––
––– 137 –––
––– 264 –––
S VDS = 50V, ID = 13A
ID = 22A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 „
VDD = 250V
ns ID = 22A
RG = 4.3
RD = 11,See Fig. 10 „
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
1180
22
28
Units
mJ
A
mJ
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Diode Characteristics
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
°C/W
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
––– ––– 22
––– ––– 88
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5
––– 570 850
––– 6.1 9.2
V TJ = 25°C, IS = 22A, VGS = 0V „
ns TJ = 25°C, IF = 22A
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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डाउनलोड[ IRFP22N50APBF Datasheet.PDF ]


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