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JANTXV2N7228 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET - IRF

भाग संख्या JANTXV2N7228
समारोह POWER MOSFET
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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<?=JANTXV2N7228?> डेटा पत्रक पीडीएफ

JANTXV2N7228 pdf
IRFM450
JANTX2N7228 / JANTXV2N7228
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
BVDSS
BVDSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
500 ––– ––– V
––– 0.68 ––– V/°C
RDS(on)
Static Drain-to-Source On-State
Resistance
––– ––– 0.415
––– ––– 0.515

VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V
Gfs Forward Transconductance
6.5 ––– ––– S
IDSS
Zero Gate Voltage Drain Current
––– ––– 25
––– ––– 250
µA
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
––– ––– 100
––– ––– -100
nA
QG Total Gate Charge
QGS Gate-to-Source Charge
QGD Gate-to-Drain (‘Miller’) Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
––– ––– 120
––– ––– 19
––– ––– 70
––– ––– 35
––– ––– 190
––– ––– 170
––– ––– 130
nC  
ns
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 8.0A 
VGS = 10V, ID = 12A 
VDS = VGS, ID = 250µA
VDS = 15V, ID = 8.0A
VDS = 400V, VGS = 0V
VDS = 400V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
ID = 12A
VDS = 250V
VGS = 10V
VDD = 250V
ID = 12A
RG = 2.35
VGS = 10V
Ls +LD
Total Inductance
––– 6.8 –––
nH  
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
Ciss Input Capacitance
––– 2700 –––
VGS = 0V
Coss Output Capacitance
––– 600 ––– pF   VDS = 25V
Crss
Reverse Transfer Capacitance
––– 240 –––
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode) ––– ––– 12
Pulsed Source Current (Body Diode) ––– ––– 48
A 
VSD Diode Forward Voltage
––– ––– 1.7
V TJ = 25°C,IS = 12A, VGS = 0V
trr Reverse Recovery Time
––– ––– 1600 ns TJ = 25°C, IF = 12A, VDD 50V
Qrr Reverse Recovery Charge
––– ––– 14 µC di/dt = 100A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance  
Parameter
RJC Junction-to-Case
RCS
Case -to-Sink
RJA Junction-to-Ambient (Typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.21
–––
Max.
0.83
–––
48
Units
°C/W
 Footnotes:
 Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L = 10.4mH, Peak IL = 12A, VGS = 10V
ISD 12A, di/dt 130A/µs, VDD 500V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%.
2
2016-06-16

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