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11NM80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STF11NM80 - ST Microelectronics

भाग संख्या 11NM80
समारोह STF11NM80
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=11NM80?> डेटा पत्रक पीडीएफ

11NM80 pdf
STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(*) Limited only by the Maximum Temperature Allowed
Table 4: Thermal Data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = 2.5A, VDD = 50 V)
Value
TO-220/D2PAK
TO-247
800
800
± 30
11
4.7
44
150
1.2
TO-220FP
11 (*)
4.7 (*)
44 (*)
35
0.28
-65 to 150
Unit
V
V
V
A
A
A
W
W /°C
°C
TO-220/D2PAK
TO-247
0.83
62.5
300
TO-220FP
3.6
Unit
°C/W
°C/W
°C
Max Value
2.5
400
Unit
A
mJ
2/14
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डाउनलोड[ 11NM80 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
11NM80STF11NM80ST Microelectronics
ST Microelectronics


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