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MCR100-4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Sensitive Gate Silicon Controlled Rectifiers - ON Semiconductor

भाग संख्या MCR100-4
समारोह Sensitive Gate Silicon Controlled Rectifiers
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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<?=MCR100-4?> डेटा पत्रक पीडीएफ

MCR100-4 pdf
MCR100 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Notes 1 and 2)
(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; RGK = 1 kW)
MCR1003
MCR1004
MCR1006
MCR1008
VDRM,
VRRM
100
200
400
600
V
On-State RMS Current, (TC = 80°C) 180° Conduction Angles
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C)
Circuit Fusing Consideration, (t = 8.3 ms)
IT(RMS)
ITSM
I2t
0.8
10
0.415
A
A
A2s
Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms)
PGM
0.1
W
Forward Average Gate Power, (TA = 25°C, t = 8.3 ms)
PG(AV)
0.01
W
Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms)
IGM 1.0
A
Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms)
VGRM
5.0
V
Operating Junction Temperature Range @ Rate VRRM and VDRM
TJ 40 to 110 °C
Storage Temperature Range
Tstg 40 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,JunctiontoCase
JunctiontoAmbient
RqJC 75 °C/W
RqJA
200
Lead Solder Temperature
(t1/16from case, 10 secs max)
TL 260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VD = Rated VDRM and VRRM; RGK = 1 kW)
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
Peak Forward OnState Voltage*
(ITM = 1.0 A Peak @ TA = 25°C)
Gate Trigger Current (Note 4)
(VAK = 7.0 Vdc, RL = 100 W)
TC = 25°C
Holding Current (Note 3)
TC = 25°C
(VAK = 7.0 Vdc, Initiating Current = 20 mA, RGK = 1 kW) TC = 40°C
Latch Current (Note 4)
(VAK = 7.0 V, Ig = 200 mA)
TC = 25°C
TC = 40°C
Gate Trigger Voltage (Note 4)
(VAK = 7.0 Vdc, RL = 100 W)
TC = 25°C
TC = 40°C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1 kW,TJ = 110°C)
Critical Rate of Rise of OnState Current
(IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%.
3. RGK = 1000 W included in measurement.
4. Does not include RGK in measurement.
IDRM, IRRM
VTM
IGT
IH
IL
VGT
dV/dt
di/dt
mA
− − 10
− − 100
− − 1.7 V
40 200 mA
0.5 5.0 mA
− − 10
0.6 10 mA
− − 15
0.62 0.8
− − 1.2
V
20 35
V/ms
− − 50 A/ms
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