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SMK1360CI डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Advanced N-Ch Power MOSFET - Kodenshi

भाग संख्या SMK1360CI
समारोह Advanced N-Ch Power MOSFET
मैन्युफैक्चरर्स Kodenshi 
लोगो Kodenshi लोगो 
पूर्व दर्शन
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<?=SMK1360CI?> डेटा पत्रक पीडीएफ

SMK1360CI pdf
SMK1360CI
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
BVDSS
VGS(th)
ID=250μA, VGS=0
ID=250μA, VDS=VGS
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
VDS=600V, VGS=0V
VDS=600V, VGS=0V
TC=125
VDS=0V, VGS=±30V
VGS=10V, ID=6.5A
VDS=10V, ID=6.5A
VGS=0V, VDS=25V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=300V, ID=13A
RG=25
Total gate charge
Gate-source charge
Gate-drain charge
Qg
VDS=480V, VGS=10V
Qgs ID=13A
Qgd
Min.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
0.55
10
2162
183
14.6
30
85
140
90
41
13
10.5
Max.
-
4.0
1
100
±100
0.65
-
2882
244
19.4
-
-
-
-
63
-
-
Unit
V
V
uA
nA
Ω
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
IS Integral reverse diode
ISP in the MOSFET
VSD VGS=0V, IS=13A
- - 13
- - 52
- - 1.4
Reverse recovery time
Reverse recovery charge
trr IS=13A, VGS=0V
Qrr dIS/dt=100A/us
- 510 -
- 4.3 -
Unit
A
V
ns
uC
Note ;
Repetitive rating : Pulse width limited by maximum junction temperature
L=5.9mH, IAS=13A, VDD=50V, RG=25, Starting TJ=25
Pulse Test : Pulse width300us, Duty cycle2%
Essentially independent of operating temperature
KSD-T0V001-001
2
Free Datasheet http://www.Datasheet4U.com

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डाउनलोड[ SMK1360CI Datasheet.PDF ]


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