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MMFT3055V डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या MMFT3055V
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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<?=MMFT3055V?> डेटा पत्रक पीडीएफ

MMFT3055V pdf
MMFT3055V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (Note 3)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk 2.0) (Note 3)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 0.85 Adc)
(Cpk 2.0) (Note 3)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 1.7 Adc)
(VGS = 10 Vdc, ID = 0.85 Adc, TJ = 150°C)
Forward Transconductance (VDS = 8.0 Vdc, ID = 1.7 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 30 Vdc, ID = 1.7 Adc,
VGS = 10 Vdc, RG = 9.1 W)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 1.7 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 1(.I7SA=d1c.,7VAGdSc=, V0GVSd=c,0TVJ d=c1) 50°C)
Reverse Recovery Time
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values. Cpk =
Max limit Typ
3 x SIGMA
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
60
63
Vdc
mV/°C
mAdc
− − 10
− − 100
− − 100 nAdc
2.0 2.8 4.0
Vdc
5.6 mV/°C
0.115 0.13
W
Vdc
− − 0.27
− − 0.25
1.0 2.7
mhos
360 500 pF
110 150
25 50
8.0 20
9.0 20
32 60
18 40
13 20
2.0
5.0
4.0
ns
nC
0.85 1.6
0.7
40
34
6.0
0.089
Vdc
ns
mC
4.5
7.5
nH
nH
http://onsemi.com
2
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