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IRF1324SPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF1324SPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF1324SPBF?> डेटा पत्रक पीडीएफ

IRF1324SPBF pdf
IRF1324S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
24 ––– ––– V VGS = 0V, ID = 250µA
d––– 22 ––– mV/°C Reference to 25°C, ID = 5.0mA
g––– 1.3 1.65 mVGS = 10V, ID = 195A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 250
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
RG Internal Gate Resistance
––– 2.3 –––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
180 ––– ––– S VDS = 10V, ID = 195A
Qg
Qgs
Qgd
Qsync
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
––– 160 240
––– 84 –––
––– 49 –––
––– 76 –––
––– 17 –––
––– 190 –––
nC ID = 195A
gVDS = 12V
VGS = 10V
ID = 195A, VDS =0V, VGS = 10V
ns VDD = 16V
ID = 195A
td(off)
tf
Ciss
Coss
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
––– 83 –––
––– 120 –––
––– 7590 –––
––– 3440 –––
gRG = 2.7
VGS = 10V
pF VGS = 0V
VDS = 24V
Crss Reverse Transfer Capacitance
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
Coss eff. (TR) Effective Output Capacitance (Time Related) –––
Diode Characteristics
1960
4700
4490
–––
–––
–––
ƒ = 1.0 MHz, See Fig. 5
iVGS = 0V, VDS = 0V to 19V , See Fig. 11
hVGS = 0V, VDS = 0V to 19V
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
™––– ––– 350 A MOSFET symbol
showing the
D
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
––– ––– 1420 A integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 195A, VGS = 0V
––– 46 ––– ns TJ = 25°C
VR = 20V,
S
Qrr Reverse Recovery Charge
––– 71 –––
––– 160 –––
TJ = 125°C
nC TJ = 25°C
gIF = 195A
di/dt = 100A/µs
––– 430 –––
TJ = 125°C
IRRM Reverse Recovery Current
ton Forward Turn-On Time
––– 7.7 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 195A, di/dt 450A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140).
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.014mH
RG = 25, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
2 www.irf.com
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