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IRF1324S-7PPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF1324S-7PPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF1324S-7PPBF pdf
IRF1324S-7PPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
24 ––– ––– V VGS = 0V, ID = 250μA
d––– 0.023 ––– V/°C Reference to 25°C, ID = 5mA
g––– 0.80 1.0 mΩ VGS = 10V, ID = 160A
2.0 ––– 4.0 V VDS = VGS, ID = 250μA
––– ––– 20 μA VDS = 24V, VGS = 0V
––– ––– 250
VDS = 19V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 3.0 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
hEffective Output Capacitance (Time Related)
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
47
58
122
19
240
86
93
7700
3380
1930
4780
4970
–––
252
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 50V, ID = 160A
nC ID = 75A
VDS =12V
gVGS = 10V
gID = 75A, VDS =0V, VGS = 10V
ns VDD = 16V
ID = 160A
gRG =2.7Ω
VGS = 10V
pF VGS = 0V
VDS = 19V
ƒ = 1.0MHz, See Fig.5
iVGS = 0V, VDS = 0V to 19V , See Fig.11
VGS = 0V, VDS = 0V to 19V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 429
A MOSFET symbol
showing the
––– ––– 1636 A integral reverse
G
––– ––– 1.3
––– 71 107
p-n junction diode.
gV TJ = 25°C, IS = 160A, VGS = 0V
ns TJ = 25°C
VR = 20V,
––– 74 110
TJ = 125°C
––– 83 120 nC TJ = 25°C
gIF = 160A
di/dt = 100A/μs
––– 92 140
TJ = 125°C
––– 2.0 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 160A, di/dt 600A/μs, VDD V(BR)DSS, TJ 175°C.
temperature. Package limitation current is 240A. Note that current … Pulse width 400μs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.(Refer to AN-1140
as Coss while VDS is rising from 0 to 80% VDSS.
http://www.irf.com/technical-info/appnotes/an-1140.pdf
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.018mH
RG = 25Ω, IAS = 160A, VGS =10V. Part not recommended for use
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
above this value.
2 www.irf.com © 2014 International Rectifier
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