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IRF7317PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7317PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF7317PBF pdf
IRF7317PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 20 — —
P-Ch -20 — —
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
— 0.027 —
— 0.031 —
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
—
—
—
—
0.023 0.029
0.030 0.046
0.049 0.058
0.082 0.098
VGS = 4.5V, ID = 6.0A „
VGS = 2.7V, ID = 5.2A „
VGS = -4.5V, ID = -2.9A „
VGS = -2.7V, ID = -1.5A „
N-Ch 0.7 — —
P-Ch -0.7 — —
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch — 20 —
P-Ch — 5.9 —
S
VDS = 10V, ID = 6.0A „
VDS = -10V, ID = -1.5A
„
N-Ch — — 1.0
VDS = 16V, VGS = 0V
P-Ch —
N-Ch —
—
—
-1.0
5.0
µA
VDS = -16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 55°C
P-Ch — — -25
VDS = -16V, VGS = 0V, TJ = 55°C
N-P –– — ±100 nA VGS = ±12V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
18 27
19 29
2.2 3.3
4.0 6.1
6.2 9.3
7.7 12
nC
N-Channel
ID = 6.0A, VDS = 10V, VGS = 4.5V
„
P-Channel
ID = -2.9A, VDS = -16V, VGS = -4.5V
N-Ch — 8.1 12
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
—
15
17
40
38
42
31
49
22
25
60
57
63
47
73
ns
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,
RD = 10
„
P-Channel
VDD = -10V, ID = -2.9A, RG = 6.0,
RD = 3.4
N-Ch — 900 —
N-Channel
P-Ch — 780 —
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
N-Ch — 430 — pF
P-Ch — 470 —
P-Channel
N-Ch — 200 —
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
P-Ch — 240 —
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 2.5
IS
Continuous Source Current (Body Diode)
P-Ch — — -2.5 A
N-Ch — — 26
ISM
Pulsed Source Current (Body Diode) 
P-Ch — — -21
VSD Diode Forward Voltage
N-Ch — 0.72 1.0
P-Ch — -0.78 -1.0
V
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
TJ = 25°C, IS = -2.9A, VGS = 0V ƒ
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
N-Ch —
P-Ch —
52
47
77
71
ns
N-Channel
TJ = 25°C, IF =1.7A, di/dt = 100A/µs
N-Ch —
P-Ch —
58
49
86
73
nC
P-Channel
„
TJ = 25°C, IF = -2.9A, di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
„ Pulse width 300µs; duty cycle 2%.
‚ N-Channel ISD 4.1A, di/dt 92A/µs, VDD V(BR)DSS, TJ 150°C
P-Channel ISD -2.9A, di/dt -77A/µs, VDD V(BR)DSS, TJ 150°C
… Surface mounted on FR-4 board, t 10sec.
ƒ N-Channel Starting TJ = 25°C, L = 12mH RG = 25, IAS = 4.1A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25, IAS = -2.9A.
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