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SMK630F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Advanced N-Ch Power MOSFET - Kodenshi

भाग संख्या SMK630F
समारोह Advanced N-Ch Power MOSFET
मैन्युफैक्चरर्स Kodenshi 
लोगो Kodenshi लोगो 
पूर्व दर्शन
1 Page
		
<?=SMK630F?> डेटा पत्रक पीडीएफ

SMK630F pdf
SMK630F
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Drain-source breakdown voltage
BVDSS ID=250uA, VGS=0
200 - - V
Gate threshold voltage
VGS(th)
ID=250uA, VDS=VGS
2.0 - 4.0 V
Drain-source cut-off current
IDSS
VDS=200V, VGS=0V
- - 1 uA
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
IGSS
RDS(ON)
gfs
VDS=0V, VGS=±30V
VGS=10V, ID=4.5A
VDS=10V, ID=4.5A
- - ±100 nA
- 0.34 0.40
Ω
- 5.5 -
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f=1MHz
- 420 525
-
99 128
pF
- 24 28
Turn-on delay time
td(on)
- 11 -
Rise time
tr
VDD=100V, ID=9A
RG=25
- 92 -
Turn-off delay time
td(off)
- 70 -
Fall time
Total gate charge
上海元佐电子Gate-source charge
Gate-drain charge
tf - 72 -
Qg
VDS=160V, VGS=10V
Qgs ID=9A
- 12 17
- 2.4 -
Qgd - 3.5 -
021-54953990Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
021-54950919Source current (DC)
Source current (Pulsed)
Forward voltage
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, IS=9A
- -9
- - 36
- - 1.4
www.yozo.hkReverse recovery time
Reverse recovery charge
trr IS=9A, VGS=0V
Qrr dIF/dt=100A/us
- 158 -
- 0.97 -
Note ;
ns
nC
Unit
A
V
ns
uC
Repetitive rating : Pulse width limited by maximum junction temperature
L=4.3mH, IAS=9A, VDD=50V, RG=25, Starting TJ=25
Pulse Test : Pulse width300us, Duty cycle2%
Essentially independent of operating temperature
KSD-T0O043-001
2
http://www.Datasheet4U.com

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