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RU4099 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Advanced Power MOSFET - Ruichips

भाग संख्या RU4099
समारोह N-Channel Advanced Power MOSFET
मैन्युफैक्चरर्स Ruichips 
लोगो Ruichips लोगो 
पूर्व दर्शन
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<?=RU4099?> डेटा पत्रक पीडीएफ

RU4099 pdf
RU4099
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU4099
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
SyImDSbS ol Zero Gate Voltage Drain Current
VDS= 40V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON)
Drain-Source On-state Resistance
VGS= 10V, IDS=40A
40
2
V
1
µA
30
34V
±100 nA
2.8 3.5 m
Diode Characteristics
VSD
Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=40 A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=35V, RL=35,
IDS= 1A, VGEN= 10V,
RG=6
VDS=30V, VGS= 10V,
IDS=40A
0.77 1.2
74
148
V
ns
nC
1.4
5750
1400
480
21 40
37 69
75 136
115 208
pF
ns
154 218
44
47
nC
Notes:
Pulse width limited by safe operating area.
Current limited by package( Limitation Current is 75A )
Pulse test ; Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev.B –JUN., 2010
2
www.ruichips.com
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