RU4099R डेटा पत्रक PDF( Datasheet डाउनलोड )

		



RU4099R
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU4099R
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS= 40V, VGS=0V
IDSS Zero Gate Voltage Drain Current
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
④
RDS(ON)
Drain-Source On-state Resistance
VGS= 10V, IDS=40A
40
2
V
1
µA
30
34V
±100 nA
2.8 3.5 mΩ
Diode Characteristics
④
VSD Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
⑤
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
⑤
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=35V, RL=35Ω,
IDS= 1A, VGEN= 10V,
RG=6Ω
VDS=30V, VGS= 10V,
IDS=40A
1.2 V
74 ns
148 nC
1.4
5750
1400
480
21
37
75
115
Ω
pF
ns
154
44 nC
47
Notes:
①Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
②Pulse width limited by safe operating area.
③Limited by TJmax, IAS =30A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C.
④Pulse test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev.C –NOV., 2012
2
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