 # STPS1545C डेटा पत्रक PDF( Datasheet डाउनलोड )

## डेटा पत्रक - Power Schottky rectifier - STMicroelectronics

 भाग संख्या STPS1545C समारोह Power Schottky rectifier मैन्युफैक्चरर्स STMicroelectronics लोगो पूर्व दर्शन 1 Page ```  Characteristics 1 Characteristics STPS1545C Table 2. Absolute ratings (limiting values) Symbol Parameter Value VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current δ = 0.5 IFSM Surge non repetitive forward current IRRM Peak repetitive reverse current Tc = 157 °C Per diode tp = 10 ms sinusoidal tp = 2 µs square F = 1 kHz 45 20 7.5 150 1 IRSM PARM Tstg Tj dV/dt Non repetitive peak reverse current tp = 100 µs square Repetitive peak avalanche power tp = 1 µs Tj = 25 °C Storage temperature range Maximum operating junction temperature (1) Critical rate of rise of reverse voltage 2 2700 -65 to + 175 175 10000 1. d----P-----t--o----t dTj < R-----t--h----(-1--j--–-----a----) condition to avoid thermal runaway for a diode on its own heatsink Table 3. Thermal resistances Symbol Parameter Value Rth(j-c) Junction to case Rth(c) Coupling Per diode Total 3.0 1.7 0.35 Unit V A A A A A W °C °C V/µs Unit °C/W When the diodes 1 and 2 are used simultaneously: ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c) Table 4. Symbol Static electrical characteristics (per diode) Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C Tj = 125 °C VR =VRRM VF(1) Forward voltage drop Tj = 125°C Tj = 25°C IF = 7.5A IF = 15 A Tj = 125 °C IF = 15 A 1. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.020 IF2(RMS) - - 100 µA - 5 15 mA - 0.5 0.57 - - 0.84 V - 0.65 0.72 2/10 Doc ID 3503 Rev 7 ``` विन्यास 10 पेज डाउनलोड [ STPS1545C Datasheet.PDF ]

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