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IRF1404Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF1404Z
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF1404Z?> डेटा पत्रक पीडीएफ

IRF1404Z pdf
IRF1404ZS_L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.033 –––
––– 2.7 3.7
eV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 75A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
170 ––– ––– V VDS = 25V, ID = 75A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 100 150
ID = 75A
Qgs Gate-to-Source Charge
––– 31 ––– nC VDS = 32V
eQgd
Gate-to-Drain ("Miller") Charge
––– 42 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 20V
tr Rise Time
––– 110 –––
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 36 ––– ns RG = 3.0 Ω
––– 58 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 4340 –––
––– 1030 –––
––– 550 –––
––– 3300 –––
––– 920 –––
––– 1350 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 750
A showing the
integral reverse
––– –––
––– 28
––– 34
1.3
42
51
ep-n junction diode.
V TJ = 25°C, IS = 75A, VGS = 0V
ens TJ = 25°C, IF = 75A, VDD = 20V
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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