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SUD50P10-43 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel MOSFET - Vishay

भाग संख्या SUD50P10-43
समारोह P-Channel MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=SUD50P10-43?> डेटा पत्रक पीडीएफ

SUD50P10-43 pdf
SUD50P10-43
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
DVDS/TJ
DVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = –250 mA
ID = –250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –100 V, VGS = 0 V
VDS = –100 V, VGS = 0 V, TJ = 55 _C
VDS w 5 V, VGS = –10 V
VGS = –10 V, ID = –9.4 A
VDS = –15 V, ID = –9.4 A
–100
–2
–35
–105
7
–3
0.036
30
V
mV/_C
–4
"100
–1
–10
0.043
V
nA
mA
A
W
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VDS = –50 V, VGS = 0 V, f = 1 MHz
VDS = –50 V, VGS = –10 V, ID = –9.4 A
f = 1 MHz
VDD = –50 V, RL = 6.4 W
ID ^ –7.8 A, VGEN = –10 V, Rg = 1 W
5230
230
165
105
21
29
4.1
30
115
80
60
160
50
175
120
90
pF
nC
W
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IS TC = 25 _C
ISM
VSD IS = –7.8 A
trr
Qrr IF = –7.8 A, di/dt = 100 A/ms, TJ = 25 _C
ta
tb
–0.8
60
180
48
12
–50
–50
–1.2
90
270
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
http://www.Datasheet4U.com

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डाउनलोड[ SUD50P10-43 Datasheet.PDF ]


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