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SUD50P10-43L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel MOSFET - Vishay

भाग संख्या SUD50P10-43L
समारोह P-Channel MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
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<?=SUD50P10-43L?> डेटा पत्रक पीडीएफ

SUD50P10-43L pdf
SUD50P10-43L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = - 100 V, VGS = 0 V
VDS = - 100 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = - 10 V, ID = - 9.2 A
VGS = - 4.5 V, ID = - 7.7 A
VDS = - 15 V, ID = - 9.2 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 50 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 50 V, VGS = - 10 V, ID = - 9.2 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 50 V, VGS = - 4.5 V, ID = - 9.2 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 50 V, RL = 6.5 Ω
ID - 7.7 A, VGEN = - 10 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 50 V, RL = 6.5 Ω
ID - 7.7 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
TC = 25 °C
Body Diode Voltage
VSD IS = - 7.7 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 7.7 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 100
-1
- 40
Typ.
- 109
5.9
0.036
0.040
38
4600
230
175
106
54
14
26
4
15
20
110
100
42
160
100
100
- 0.8
60
150
46
14
Max. Unit
V
mV/°C
-3
± 100
-1
- 10
0.043
0.048
V
nA
µA
A
Ω
S
pF
160
81
nC
25
30
165
150
65
240
150
150
- 50
- 40
- 1.2
90
225
Ω
ns
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
http://www.Datasheet4U.com

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