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PHW11N50E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PowerMOS transistors - Philips

भाग संख्या PHW11N50E
समारोह PowerMOS transistors
मैन्युफैक्चरर्स Philips 
लोगो Philips लोगो 
पूर्व दर्शन
1 Page
		
<?=PHW11N50E?> डेटा पत्रक पीडीएफ

PHW11N50E pdf
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHB11N50E, PHW11N50E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche Unclamped inductive load, IAS = 10.9 A;
energy
tp = 0.2 ms; Tj prior to avalanche = 25˚C;
Repetitive avalanche energy2
VDD 50 V; RGS = 50 ; VGS = 10 V
IAR = 10.9 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 ; VGS = 10 V
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
707
18
10.9
UNIT
mJ
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 0.8 K/W
SOT78 package, in free air
- 60 - K/W
SOT429 package, in free air
- 45 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
V(BR)DSS / Drain-source breakdown
Tj voltage temperature
coefficient
VDS = VGS; ID = 0.25 mA
RDS(ON)
VGS(TO)
gfs
IDSS
IGSS
Drain-source on resistance VGS = 10 V; ID = 5.5 A
Gate threshold voltage
VDS = VGS; ID = 0.25 mA
Forward transconductance VDS = 30 V; ID = 5.5 A
Drain-source leakage current VDS = 500 V; VGS = 0 V
VDS = 400 V; VGS = 0 V; Tj = 125 ˚C
Gate-source leakage current VGS = ±30 V; VDS = 0 V
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 11 A; VDD = 400 V; VGS = 10 V
td(on) Turn-on delay time
tr Turn-on rise time
td(off) Turn-off delay time
tf Turn-off fall time
VDD = 250 V; RD = 22 ;
RG = 5.6
Ld Internal drain inductance Measured from tab to centre of die
Ld Internal drain inductance Measured from drain lead to centre of die
(SOT429 package only)
Ls Internal source inductance Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
500 -
-V
- 0.1 - %/K
- 0.47 0.55
2.0 3.0 4.0 V
4 6.5 -
S
- 1 25 µA
- 60 500 µA
- 10 200 nA
- 75 100 nC
- 7 12 nC
- 39 55 nC
- 11 - ns
- 38 - ns
- 92 - ns
- 40 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 1326 -
- 182 -
- 96 -
pF
pF
pF
2 pulse width and repetition rate limited by Tj max.
December 1998
2
Rev 1.000
http://www.Datasheet4U.com

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