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TSC5304ED डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage NPN Transistor - Taiwan Semiconductor

भाग संख्या TSC5304ED
समारोह High Voltage NPN Transistor
मैन्युफैक्चरर्स Taiwan Semiconductor 
लोगो Taiwan Semiconductor लोगो 
पूर्व दर्शन
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<?=TSC5304ED?> डेटा पत्रक पीडीएफ

TSC5304ED pdf
TSC5304ED
High Voltage NPN Transistor with Diode
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RӨJC
RӨJA
Limit
3.57
68
Unit
oC/W
oC/W
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Collector-Base Voltage
IC =1mA, IB =0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
IC =10mA, IE =0
IE =1mA, IC =0
VCB =700V, IE =0
VCE =400V, IB =0
VEB =7V, IC =0
IC =0.5A, IB =0.1A
IC =1A, IB =0.2A
IC =2.5A, IB =0.5A
Base-Emitter Saturation Voltage
DC Current Gain
Forward Voltage Drop
Turn On Time
Storage Time
Fall Time
IC =4A, IB =1A
IC =1A, IB =0.2A
IC =2A, IB =0.5A
VCE =5V, IC =10mA
VCE =5V, IC =1A
VCE =5V, IC =2A
IF =2A
VCC =250V, IC =1A,
IB1=IB2=0.2A, tp=25uS
Duty Cycle<1%
Turn On Time
VCC =5V, IC =0.1A,
Storage Time
IB1=IB2=0.02A, tp=25uS
Fall Time
Duty Cycle<1%
Notes: Pulsed duration =380uS, duty cycle 2%
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
VCE(SAT)4
VBE(SAT)1
VBE(SAT)2
Hfe
Vf
tON
tSTG
tf
tON
tSTG
tf
Min
700
400
9
--
--
--
--
--
--
--
--
--
10
17
12
--
--
--
--
--
6.5
--
Typ
--
--
--
--
--
--
0.25
0.5
1.2
0.5
--
--
--
--
--
--
0.2
3.0
0.2
0.35
--
0.3
Max Unit
-- V
-- V
-- V
100 uA
250 uA
10 uA
0.7
1
V
1.5
--
1.1
V
1.2
--
37
32
2V
0.6 uS
4.5 uS
0.3 uS
0.6 uS
8.5 uS
0.6 uS
2/6
Version: E11
http://www.Datasheet4U.com

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TSC5304EDHigh Voltage NPN TransistorTaiwan Semiconductor
Taiwan Semiconductor


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