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SI2305 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Field Effect Transistor - MCC

भाग संख्या SI2305
समारोह P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स MCC 
लोगो MCC लोगो 
पूर्व दर्शन
1 Page
		
<?=SI2305?> डेटा पत्रक पीडीएफ

SI2305 pdf
SI2305
Electrical characteristics (Ta=25oC unless otherwise noted)
MCC
TM
Micro Commercial Components
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistancea
Forward transconductancea
Dynamic
Input capacitanceb,c
Output capacitanceb,c
Reverse transfer capacitanceb,c
Total gate chargeb
Symbol
Test Condition
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0V, ID =-250µA
VDS =VGS, ID =-250µA
VDS =0V, VGS =±8V
VDS =-8V, VGS =0V
VGS =-4.5V, ID =-3.5A
VGS =-2.5V, ID =-3A
VGS =-1.8V,ID=-2.0A
VDS =-5V, ID =-4.1A
Ciss
Coss VDS =-4V,VGS =0V,f =1MHz
Crss
VDS =-4V,VGS =-4.5V,
Qg ID =-4.1A
Gate-source chargeb
Gate-drain chargeb
Gate resistanceb,c
Turn-on delay timeb,c
Rise timeb,c
Turn-off Delay timeb,c
Fall timeb,c
Turn-on delay timeb,c
Rise timeb,c
Turn-off delay timeb,c
Fall timeb,c
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS =-4V,VGS =-2.5V,
ID =-4.1A
f =1MHz
VDD=-4V,
RL=1.2 ,ID=-3.3A,
VGEN=-4.5V,Rg=1
VDD=-4V,
RL=1.2,ID =-3.3A,
VGEN=-8V,Rg=1
Drain-source body diode characteristics
Continuous source-drain diode current
Pulse diode forward currenta
IS
ISM
TC=25oC
Body ciode voltage
VSD IF=-3.3A
Note :
a. Pulse Test ; Pulse Width<_ 300µs, Duty Cycle <_ 2%.
b. Guaranteed by design, not subject to production testing.
c. These parameters have no way to verify.
Min Typ Max Units
-8
-0.5
6
-0.9
±100
-1
0.045
0.060
0.090
V
nA
µA
S
740
290
190
7.8 15
4.5 9
1.2
1.6
1.4 7 14
13 20
35 53
32 48
10 20
5 10
11 17
22 33
16 24
pF
nC
ns
-1.4
-10
-0.8 -1.2
A
V
Revision: A
www.mccsemi.com
2 of 4
2013/03/08
http://www.Datasheet4U.com

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डाउनलोड[ SI2305 Datasheet.PDF ]


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