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Si7905DN डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P-Channel 40 V (D-S) MOSFET - VISHAY

भाग संख्या Si7905DN
समारोह Dual P-Channel 40 V (D-S) MOSFET
मैन्युफैक्चरर्स VISHAY 
लोगो VISHAY लोगो 
पूर्व दर्शन
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<?=Si7905DN?> डेटा पत्रक पीडीएफ

Si7905DN pdf
Si7905DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 94 °C/W.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
38
4.5
Maximum
50
6
Unit
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 40 V, VGS = 0 V
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 5 A
VGS = - 4.5 V, ID = - 4 A
VDS = - 15 V, ID = - 5 A
VDS = - 20 V, VGS = 0 V, f = 1 MHz
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rg
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
Turn-On Delay Time
tf
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
f = 1 MHz
VDD = - 20 V, RL = 5
ID - 4 A, VGEN = - 4.5 V, Rg = 1
VDD = - 20 V, RL = 5
ID - 4 A, VGEN = - 10 V, Rg = 1
TC = 25 °C
IF = - 4 A
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 40
-1
- 10
Typ.
- 44
4.3
0.048
0.065
25
880
100
80
20
11
3
5
5.7
42
100
24
11
6
13
26
10
- 0.8
20
15
14
16
Max. Unit
-3
± 100
-1
- 10
0.060
0.089
V
mV/°C
V
nA
µA
A
S
pF
30
16.5
nC
8.6
65
150
40
17
10
20
40
16
-6
- 20
- 1.2
30
23
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 69920
2 S11-2187-Rev. C, 07-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com

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