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SW6N90 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel TO-262 MOSFET - SEMIPOWER

भाग संख्या SW6N90
समारोह N-channel TO-262 MOSFET
मैन्युफैक्चरर्स SEMIPOWER 
लोगो SEMIPOWER लोगो 
पूर्व दर्शन
1 Page
		
<?=SW6N90?> डेटा पत्रक पीडीएफ

SW6N90 pdf
SAMWIN
SW6N90
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS Gate to source leakage current, reverse
On characteristics
VDS=900V, VGS=0V
VDS=720V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDS=VGS, ID=250uA
VGS=10V, ID = 3A
VDS = 40 V, ID = 3 A
VGS=0V, VDS=25V, f=1MHz
VDS=450V, ID=6A, RG=25
(note 45)
VDS=720V, VGS=10V, ID=6A
(note 45)
Source to drain diode ratings characteristics
Min.
900
3.0
6
Typ. Max. Unit
V
0.91
V/oC
1
50
100
-100
uA
uA
nA
nA
5.0 V
1.8 2.3
S
1400
120 pF
35
23 50
26 60
ns
58 120
24 50
40 90
8 nC
19
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
VSD Diode forward voltage drop.
Trr Reverse recovery time
Qrr Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=6.0A, VGS=0V
IS=6.0A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 30mH, IAS = 6.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 6.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min. Typ. Max. Unit
6.0 A
24.0 A
1.5 V
436 ns
5.2 uC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
2/5
http://www.Datasheet4U.com

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SW6N90N-channel TO-262 MOSFETSEMIPOWER
SEMIPOWER


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