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IRF7665S2TR1PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DIGITAL AUDIO MOSFET - IRF

भाग संख्या IRF7665S2TR1PbF
समारोह DIGITAL AUDIO MOSFET
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
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IRF7665S2TR1PbF pdf
IRF7665S2TR/TR1PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
VGS(th)
Gate Threshold Voltage
3.0
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
RG(int)
Internal Gate Resistance
–––
Typ.
–––
0.10
51
4.0
–––
–––
–––
–––
3.5
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
gfs Forward Transconductance
8.8 –––
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 8.3
––– 1.9
––– 0.77
––– 3.2
––– 2.4
––– 4.0
––– 3.8
––– 6.4
––– 7.1
––– 3.6
––– 515
––– 112
––– 30
––– 533
––– 67
––– 115
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
Typ.
–––
––– –––
––– –––
––– 33
––– 38
Max.
–––
–––
62
5.0
20
250
100
-100
5.0
Units
V
V/°C
m
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
fVGS = 10V, ID = 8.9A
VDS = VGS, ID = 25µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Max.
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
nC
Conditions
VDS = 25V, ID = 8.9A
VDS = 50V
VGS = 10V
ID = 8.9A
See Fig. 6 and 17
VDD = 50V
ID = 8.9A
fns RG = 6.8
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
gVGS = 0V, VDS = 0V to 80V
Typ.
–––
–––
Max.
37
8.9
Units
mJ
A
Max.
14.4
58
1.3
–––
–––
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
fTJ = 25°C, IS = 8.9A, VGS = 0V
TJ = 25°C, IF = 8.9A, VDD = 25V
fdi/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.944mH, RG = 25, IAS = 8.9A.
ƒ Surface mounted on 1 in. square Cu board.
„ Pulse width 400µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
2
† Used double sided cooling , mounting pad.
‡ Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
ˆ TC measured with thermal couple mounted to top
(Drain) of part.
‰ Rθ is measured at TJ of approximately 90°C.
Š Based on testing done using a typical device & evaluation board
at Vbus=±45V, fSW=400KHz, and TA=25°C. The delta case
temperature TC is 55°C.
www.irf.com
http://www.Datasheet4U.com

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