DataSheet.in

IRF6662PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - IRF

भाग संख्या IRF6662PbF
समारोह Power MOSFET
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF6662PbF?> डेटा पत्रक पीडीएफ

IRF6662PbF pdf
IRF6662PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
100
∆ΒVDSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
VGS(th)
Gate Threshold Voltage
3.0
VGS(th)/TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
11
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
Min.
–––
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
0.10
17.5
3.9
-9.7
–––
–––
–––
–––
–––
22
4.9
1.2
6.8
9.1
8.0
11
1.2
11
7.5
24
5.9
1360
270
61
1340
160
Typ.
–––
–––
–––
34
50
Max.
–––
–––
22
4.9
–––
20
250
100
-100
–––
31
–––
–––
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 8.2A
V VDS = VGS, ID = 100µA
mV/°C
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 4.9A
VDS = 50V
nC VGS = 10V
ID = 4.9A
See Fig. 15
nC VDS = 16V, VGS = 0V
VDD = 50V, VGS = 10V
ID = 4.9A
ns RG=6.2
See Fig. 17
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 80V, f=1.0MHz
Max.
2.5
66
1.3
51
75
Units
Conditions
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 4.9A, VGS = 0V
ns TJ = 25°C, IF = 4.9A, VDD = 50V
nC di/dt = 100A/µs See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
2
www.irf.com
http://www.Datasheet4U.com

विन्यास 10 पेज
डाउनलोड[ IRF6662PbF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF6662PbFPower MOSFETIRF
IRF
IRF6662PBFPower MOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English