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IRF6643TRPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DIGITAL AUDIO MOSFET - IRF

भाग संख्या IRF6643TRPbF
समारोह DIGITAL AUDIO MOSFET
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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<?=IRF6643TRPbF?> डेटा पत्रक पीडीएफ

IRF6643TRPbF pdf
IRF6643TRPbF
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case 
Junction-to-PCB Mounted
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forward Transconductance
16
Qg
Qgs1
Qgs2
Qgd
Qgodr
Total Gate Charge
Pre-VthGate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
–––
–––
–––
–––
–––
Qsw Switch Charge (Qgs2 + Qgd)
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
Coss Output Capacitance
–––
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Typ.
–––
0.18
29
4.0
-11
–––
–––
–––
–––
0.8
Max.
–––
–––
34.5
4.9
–––
20
250
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
mΩ VGS = 10V, ID = 7.6A
V VDS = VGS, ID = 150µA
mV/°C
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ=125°C
nA VGS = 20V
VGS = -20V
Ω
–––
39
9.6
2.2
11
16
13
9.2
5.0
13
4.4
2340
300
61
1950
140
–––
55
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 10V, ID = 7.6A
VDS = 75V
VGS = 10V
nC ID = 7.6A
ns VDD = 75V, VGS = 10V
ID = 7.6A
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS=0V, VDS=1.0V, ƒ=1.0MHz
VGS=0V, VDS=80V, ƒ=1.0MHz
Typ.
–––
–––
–––
67
190
Max.
58
76
1.3
100
280
Units
Conditions
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 7.6A, VGS = 0V
ns TJ = 25°C, IF = 7.6A,VDD = 50V
nC di/dt = 100A/µs
2 www.irf.com © 2013 International Rectifier
May 31, 2013
http://www.Datasheet4U.com

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डाउनलोड[ IRF6643TRPbF Datasheet.PDF ]


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