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BLV7N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel Enhancement Mode Power MOSFET - Estek

भाग संख्या BLV7N60
समारोह N-channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स Estek 
लोगो Estek लोगो 
पूर्व दर्शन
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<?=BLV7N60?> डेटा पत्रक पीडीएफ

BLV7N60 pdf
BLV7N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol
BVDSS
BVDSS
/TJ
RDS(ON)
VGS(th)
g fs
IDSS
IGSS
Qg
Qgs
Qgd
t (on)
tr
t (off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance(note3)
Drain-Source Leakage Current
Drain-Source Leakage Current
Tc=125
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS=0V, ID=250uA
Reference to 25,
ID=1mA
VGS=10V, ID=3.5A
VDS=VGS, ID=250uA
VDS=15V, ID=3.5A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS= ± 20V
VDD=480V
ID=7A
VGS=10V
note3
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=300V
ID=7A
RG=25
note3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
VGS=0V
f = 1MHz
Min.
600
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Units
- -V
0.6 - V/
- 1.0 Ω
- 4V
5-S
- 1 uA
- 100 uA
-
42
9.5
16.4
-
-
-
-
1253
184
84
±100
-
-
-
70
170
140
130
-
-
-
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
IS Continuous Source Diode Forward Current
ISM Pulsed Source Diode Forward Current (note1)
VSD Forward On Voltage
VGS=0V, IS=7A
t r r Reverse Recovery Time
VGS=0V, IS=7A
Qr r Reverse Recovery Charge dIF/dt = 100A/us
Min. Typ.
--
--
--
- 1190
- 3.7
Max.
7
28
1.4
-
-
Units
A
A
V
ns
uC
Note
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) L=25mH, Ias=7AVdd=50VRg=25staring Tj=25C
(3) Pulse width 300 us; duty cycle 2%
Page 2/6
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