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BLV75-12 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - VHF power transistor - Philips

भाग संख्या BLV75-12
समारोह VHF power transistor
मैन्युफैक्चरर्स Philips 
लोगो Philips लोगो 
पूर्व दर्शन
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<?=BLV75-12?> डेटा पत्रक पीडीएफ

BLV75-12 pdf
Philips Semiconductors
VHF power transistor
Product specification
BLV75/12
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the
175 MHz commmunications band.
FEATURES
multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile
gold metallization ensures
excellent reliability
internal matching to achieve an
optimum wideband capability and
high power gain
The transistor has a 6-lead flange
envelope with a ceramic cap
(SOT-119). All leads are isolated from
the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in a common-emitter class-B circuit
MODE OF OPERATION
VCE f
V MHz
narrow band; c.w.
12,5 175
PL Gp ηC
W dB %
75
> 6,5
> 55
PIN CONFIGURATION
PINNING
handbook, halfpage
1
3
5
2
4
6
PIN
1
2
3
4
5
6
DESCRIPTION
emitter
emitter
base
collector
emitter
emitter
MSB006
Fig.1 Simplified outlinbe, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
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भाग संख्याविवरणविनिर्माण
BLV75-12VHF power transistorPhilips
Philips


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