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MAX2602 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1W RF Power Transistors - Maxim

भाग संख्या MAX2602
समारोह 1W RF Power Transistors
मैन्युफैक्चरर्स Maxim 
लोगो Maxim लोगो 
पूर्व दर्शन
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<?=MAX2602?> डेटा पत्रक पीडीएफ

MAX2602 pdf
3.6V, 1W RF Power Transistors
for 900MHz Applications
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage, Shorted Base (VCES) ....................17V
Emitter Base Reverse Voltage (VEBO)...................................2.3V
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V
Average Collector Current (IC)........................................1200mA
Continuous Power Dissipation (TA = +70°C)
SOIC (derate 80mW/°C above +70°C) (Note 1) .............6.4W
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +165°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
SYMBOL
Collector-Emitter Breakdown
Voltage
BVCEO
BVCES
IC < 100µA
Collector-Emitter Sustaining
Voltage
LVCEO IC = 200mA
CONDITIONS
Open base
Shorted base
Collector-Base Breakdown
Voltage
DC Current Gain
Collector Cutoff Current
Output Capacitance
BVCBO
hFE
ICES
COB
IC < 100µA, emitter open
IC = 250mA, VCE = 3V
VCE = 6V, VBE = 0V
VCB = 3V, IE = 0mA, f = 1MHz
MIN TYP MAX UNITS
15
V
15
5.0 V
15
100
0.05 1.5
9.6
V
µA
pF
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, VCC = 3.6V, VBB = 0.750V, ZLOAD = ZSOURCE = 50Ω, POUT = 30dBm, f = 836MHz, TA = +25°C, unless oth-
erwise noted.)
PARAMETER
Frequency Range
Base Current
Harmonics
Power Gain
Collector Efficiency
SYMBOL
f
IB
2fo, 3fo
η
(Note 2)
CONDITIONS
VCC = 3.6V, POUT = 30dBm
VCC = 3.0V, POUT = 29dBm
POUT = 30dBm
No modulation
MIN TYP MAX UNITS
DC 1 GHz
4.2 mA
-43 dBc
dBc
-42
11.6 dB
58 %
Stability under Continuous
Load Mismatch Conditions
VSWR VCC = 5.5V, all angles (Note 3)
8:1
Two-Tone IMR
Noise Figure
IM3 POUT = +30dBm total power, f1 = 835MHz,
IM5 f2 = 836MHz
NF VBB = 0.9V
-16
dBc
-25
3.3 dB
Note 2: Guaranteed by design.
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation
capability is observed.
2 _______________________________________________________________________________________
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