EMD53
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol DTr1(NPN) DTr2(PNP) Unit
VCC
VIN
IO
IC(MAX)*1
PD*2 *3
Tj
Tstg
50 -50 V
40 to -10 -40 to 10 V
50 -50 mA
100 -100 mA
150(Total)
mW/Total
150 ℃
-55 to +150
℃
lElectrical characteristics (Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
f
*1
T
VCC = 5V, IO = 0.1mA
VO = 0.3V, IO = 5mA
IO / II = 5mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 10V, IO = 5mA
-
-
VCE = 10V, IE = -5mA,
f = 100MHz
Values
Min. Typ. Max.
- - 0.8
2.6 -
-
- 0.05 0.15
- - 0.88
- - 0.5
35 -
-
7 10 13
0.8 1 1.2
Unit
V
V
mA
μA
-
kΩ
-
- 250 - MHz
lElectrical characteristics (Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = -5V, IO = -0.1mA
VO = -0.3V, IO = -5mA
IO / II = -5mA / -0.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -10V, IO = -5mA
-
-
Transition frequency
f
*1
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistorEach
*2 terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
Values
Min. Typ. Max.
- - -0.8
-2.6 -
-
- -0.07 -0.15
- - -0.88
- - -0.5
35 -
-
7 10 13
0.8 1 1.2
Unit
V
V
mA
μA
-
kΩ
-
- 250 - MHz
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20131001 - Rev.003
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