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EMB53 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Complex Digital Transistors - ROHM

भाग संख्या EMB53
समारोह Complex Digital Transistors
मैन्युफैक्चरर्स ROHM 
लोगो ROHM लोगो 
पूर्व दर्शन
1 Page
		
<?=EMB53?> डेटा पत्रक पीडीएफ

EMB53 pdf
EMB53
 
lAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1 *2
Tj
Tstg
Values
-50
-50
-5
-100
150
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = -50μA
VCB = -50V
VEB = -4V
IC = -5mA, IB = -0.5mA
VCE = -10V, IC = -5mA
-
Transition frequency
f
*3
T
VCE = -10V, IE = -10V,
f = 100MHz
*1 terminal mounted on a reference footprint.
*2 120mW per element must not be exceeded.
*3 Characteristics of built-in transistor.
Values
Unit
Min. Typ. Max.
-50 - - V
-50 -
-
-5 -
-
- - -0.5
- - -0.5
- -0.07 -0.15
100 - 600
3.29 4.7 6.11
V
V
μA
μA
V
-
- 250 - MHz
                                            
 
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20131001 - Rev.003
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डाउनलोड[ EMB53 Datasheet.PDF ]


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