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DKI04103 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N Channel Trench Power MOSFET - SANKEN

भाग संख्या DKI04103
समारोह N Channel Trench Power MOSFET
मैन्युफैक्चरर्स SANKEN 
लोगो SANKEN लोगो 
पूर्व दर्शन
1 Page
		
<?=DKI04103?> डेटा पत्रक पीडीएफ

DKI04103 pdf
DKI04103
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test Conditions
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA Mounted on PCB*
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
Min. Typ. Max. Unit
− − 3.9 °C/W
− − 35.7 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Breakdown
Voltage
V(BR)DSS
Drain to Source Leakage Current
IDSS
Gate to Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Static Drain to Source
On-Resistance
RDS(ON)
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Total Gate Charge (VGS = 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
RG
Ciss
Coss
Crss
Qg1
Qg2
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 40 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 250 µA
ID = 18.8 A, VGS = 10 V
ID = 9.4 A, VGS = 4.5 V
f = 1 MHz
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDS = 20 V
ID = 23.6 A
VDD = 20 V
ID = 23.6 A
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
IS = 18.8 A, VGS = 0 V
IF =23.6 A
di/dt = 100 A/µs
Refer to Figure 3
Min. Typ. Max. Unit
40 − − V
− − 100 µA
− − ± 100 nA
1.0 2.0 2.5
V
9.5 11.8
12.7 16.8
3.0
Ω
990
180
pF
71
13.3
5.1
1.9
nC
2.0
1.6
2.2
9.6
ns
4.7
0.9 1.5 V
25.1
ns
21.6
nC
DKI04103-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DKI04103N Channel Trench Power MOSFETSANKEN
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