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APM4018NU डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - ANPEC

भाग संख्या APM4018NU
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स ANPEC 
लोगो ANPEC लोगो 
पूर्व दर्शन
1 Page
		
<?=APM4018NU?> डेटा पत्रक पीडीएफ

APM4018NU pdf
APM4018NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
BVDS(Avalanche)* Drain-Source Avalanche Voltage (Maximum)
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300µs Pulse Drain Current Tested
TC=25°C
TC=100°C
ID Continuous Drain Current
TC=25°C
TC=100°C
40
45
±20
150
-55 to 150
40
160
90
60***
48
PD
RθJC
RθJA
EAS**
Maximum Power Dissipation
Thermal Resistance-Junction to Case
TC=25°C
TC=100°C
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy, L=0.5mH
50
20
2.5
50
140
Note * Avalanche single pulse test, and avalanche period time tav100µs, duty<1%.
** Avalanche test condition: TJ=25oC, L=0.5mH, IAS=24A, VDD=30V, and VGS=10V.
*** Current is limited by bond wire.
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
APM4018NU
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
IDSS Zero Gate Voltage Drain Current VDS=32V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
RDS(ON) a Drain-Source On-State Resistance VGS=10V, IDS=20A
VGS=4.5V, IDS=10A
40
-
-
1.3
-
-
-
--
-1
- 30
23
- ±100
6.5 8
9.5 13.5
Unit
V
µA
V
nA
m
Copyright © ANPEC Electronics Corp.
Rev. A.3 - Jul., 2009
2
www.anpec.com.tw
Downloaded from Elcodis.com electronic components distributor
http://www.Datasheet4U.com

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डाउनलोड[ APM4018NU Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
APM4018NUN-Channel Enhancement Mode MOSFETANPEC
ANPEC


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