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DMG4413LSS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMG4413LSS
समारोह 30V P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMG4413LSS pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
t<10s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
DMG4413LSS
Value
-30
±20
-12
-10
-22
-17
-10
-8
-18
-14
-100
-4
Units
V
V
A
A
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.7
1.1
74
22
2.2
1.4
56
17
2.5
-55 to 150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gfs
VSD
Ciss
Coss
Crss
Min
-30
-1.1

Typ
1.6
6.3
7.9
26
-0.7
4965
1487
711
Max
-1
1
-2.1
7.5
10.2
-1.0
Gate Resistance
RG  7.3

SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
QG
QGS
QGD
td(on)
tr
td(off)
tf







46
17
16
15
9
160
66







Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG4413LSS
Document number: DS31754 Rev. 5 - 2
2 of 5
www.diodes.com
Unit
V
A
A
V
m
S
V
pF
pF
pF
Test Condition
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = VGS, ID = -250A
VGS = -10V, ID = -13A
VGS = -4.5V, ID = -10A
VDS = -15V, ID = -13A
VGS = 0V, IS = -2.7A
VDS = -15V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V
f = 1.0MHz
nC
VDS = -15V, VGS = -5V
ID = -13A
ns
VDS = -15V, VGS = -10V,
ID = -1A, RG = 6.0
September 2013
© Diodes Incorporated
http://www.Datasheet4U.com

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