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K3324 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SK3324 - NEC

भाग संख्या K3324
समारोह 2SK3324
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=K3324?> डेटा पत्रक पीडीएफ

K3324 pdf
2SK3324
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Drain Leakage Current
IDSS 100 µA VDS = 900 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
±100 nA VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off)
2.5
3.5 V VDS = 10 V, ID = 1.0 mA
Forward Transfer Admittance
| yfs |
2.5 3.3
S VDS = 20 V, ID = 3.0 A
Drain to Source On-state Resistance
RDS(on)
2.5 2.8
VGS = 10 V, ID = 3.0 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
1000
pF VDS = 10 V,
Coss 200 pF VGS = 0 V,
f = 1 MHz
Crss 42 pF
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
tf
17 ns VDD = 150 V,
38 ns ID = 3.0 A,
57 ns VGS(on) = 10 V,
RG = 10 Ω, RL = 10
33 ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
QG
QGS
QGD
VF(S-D)
32 nC VDD = 450 V,
5 nC VGS = 10 V,
20 nC ID = 6.0 A
0.9 V IF = 6.0 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr 1.9 µs IF = 6.0 A, VGS = 0 V,
Qrr 9.0 µC di/dt = 50 A/µs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL VGS
VGS
Wave Form
010 %
VGS(on) 90 %
VDD
ID 90 %
ID 0 10 %
Wave Form
ID
90 %
10 %
td(on) tr td(off) tf
ton toff
2 Data Sheet D14203EJ2V0DS00
Free Datasheet http://www.Datasheet4U.com

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