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IRF7737L2TR1PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7737L2TR1PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF7737L2TR1PBF?> डेटा पत्रक पीडीएफ

IRF7737L2TR1PBF pdf
IRF7737L2TR/TR1PbF
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
40 ––– –––
V VGS = 0V, ID = 250μA
i––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA
––– 1.5 1.9 mΩ VGS = 10V, ID = 94A
2.0
–––
3.0
-10
4.0
–––
V
mV/°C
VDS = VGS, ID = 150μA
100 ––– –––
S VDS = 10V, ID = 94A
RG Gate Resistance
––– 0.6 –––
Ω
IDSS
Drain-to-Source Leakage Current
––– –––
––– –––
5
250
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs1
Qgs2
Qgd
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 89 134
VDS = 20V, VGS = 10V
––– 18 –––
ID = 94A
––– 8 ––– nC See Fig.11
––– 34 –––
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 29 –––
––– 42 –––
––– 39 –––
––– 12 –––
––– 19 –––
––– 22 –––
––– 14 –––
––– 5469 –––
––– 1193 –––
––– 534 –––
––– 4296 –––
––– 1066 –––
––– 1615 –––
ÃinC VDS = 16V, VGS = 0V
VDD = 20V, VGS = 10V
ns
ID = 94A
RG = 1.8Ω
VGS = 0V
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
––– ––– 156
MOSFET symbol
A showing the
D
ISM Pulsed Source Current
Ãg(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
i––– ––– 624
––– ––– 1.3
integral reverse
p-n junction diode.
V IS = 94A, VGS = 0V
G
S
i––– 35 53 ns IF = 94A, VDD = 20V
––– 32 48 nC di/dt = 100A/μs
ƒ Surface mounted on 1 in. square Cu
(still air).
Notes  through Š are on page 10
2
‰ Mounted to a PCB with small
clip heatsink (still air)
‰ Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
www.irf.com
Free Datasheet http://www.Datasheet4U.com

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