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IRF6892STRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6892STRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF6892STRPBF?> डेटा पत्रक पीडीएफ

IRF6892STRPBF pdf
IRF6892STR/TR1PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.1
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
290
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
11
1.3
2.0
1.8
-9.8
–––
–––
–––
–––
–––
17
4.0
2.3
6.0
4.7
8.3
16
0.4
12
30
16
9.5
2510
850
190
Typ.
–––
–––
–––
22
37
Max. Units
Conditions
––– V VGS = 0V, ID = 1mA
––– mV/°C Reference to 25°C, ID = 5mA
i1.7
i2.6
mΩ
VGS = 10V, ID = 28A
VGS = 4.5V, ID = 22A
2.1
–––
V
mV/°C
VDS
=
VGS,
ID
=
50μA
500 μA VDS = 20V, VGS = 0V
5.0 mA VDS = 20V, VGS = 0V, TJ = 125°C
100
-100
nA
VGS = 16V
VGS = -16V
––– S VDS = 13V, ID = 22A
25
––– VDS = 13V
–––
–––
nC
VGS = 4.5V
ID = 22A
––– See Fig. 2 & 15
–––
––– nC VDS = 10V, VGS = 0V
ÃiΩ
––– VDD = 13V, VGS = 4.5V
–––
–––
ns
ID = 22A
RG= 1.8Ω
–––
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
76
MOSFET symbol
A showing the
D
220
0.75
integral reverse
G
p-n junction diode.
S
iV TJ = 25°C, IS = 22A, VGS = 0V
i33 ns TJ = 25°C, IF = 22A
56 nC di/dt = 300A/μs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400μs; duty cycle 2%.
2
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