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IRF6894MTRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6894MTRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF6894MTRPBF pdf
IRF6894MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
IGSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
1.1
–––
–––
–––
–––
gfs Forward Transconductance
255
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
0.02
0.9
1.4
1.6
-4.3
–––
–––
–––
–––
26
6.6
2.8
9.8
6.8
12.6
31
0.3
16
42
20
14
4160
1310
290
Typ.
–––
–––
–––
28
56
Max. Units
Conditions
–––
–––
1.3
1.8
2.1
–––
500
100
-100
–––
V VGS = 0V, ID = 1.0mA
V/°C
iimΩ
ID = 10mA ( 25°C-125°C)
VGS = 10V, ID = 33A
VGS = 4.5V, ID = 26A
V VDS = VGS, ID = 100μA
mV/°C VDS = VGS, ID = 10mA
μA VDS = 20V, VGS = 0V
nA VGS = 16V
VGS = -16V
S VDS =13V, ID =26A
39
––– VDS = 13V
––– nC VGS = 4.5V
––– ID = 26A
––– See Fig.15
–––
––– nC VDS = 16V, VGS = 0V
Ãi––– Ω
––– VDD = 13V, VGS = 4.5V
––– ID = 26A
––– ns RG= 1.8Ω
––– See Fig.17
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
33
MOSFET symbol
A showing the
D
260
0.75
42
84
integral reverse
G
p-n junction diode.
S
iV TJ = 25°C, IS = 26A, VGS = 0V
ins TJ = 25°C, IF =26A
nC di/dt = 340A/μs
Notes:
‡ Pulse width 400μs; duty cycle 2%.
2
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