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IRF6898MTRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6898MTRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRF6898MTRPBF pdf
IRF6898MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
IGSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
1.1
–––
–––
–––
–––
gfs Forward Transconductance 175
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS
Continuous Source Current
(Body Diode)
–––
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
0.02
0.8
1.2
1.6
-4.9
–––
–––
–––
–––
41
15
4.7
15
6.3
19.7
43
0.3
18
46
24
19
5435
1780
359
Typ.
–––
–––
–––
32
66
Max. Units
Conditions
––– V VGS = 0V, ID = 1.0mA
––– V/°C ID = 10mA ( 25°C-125°C)
i1.1
i1.6
mΩ
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 28A
2.1 V VDS = VGS, ID = 100μA
––– mV/°C VDS = VGS, ID = 10mA
500 μA VDS = 20V, VGS = 0V
100 nA VGS = 16V
-100 VGS = -16V
––– S VDS =13V, ID =28A
62
––– VDS = 13V
––– nC VGS = 4.5V
––– ID = 28A
––– See Fig.15
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
Ãi––– VDD = 13V, VGS = 4.5V
––– ID = 28A
––– ns RG= 1.8Ω
––– See Fig.17
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
35
MOSFET symbol
A showing the
D
integral reverse
G
280 p-n junction diode.
S
i0.75 V TJ = 25°C, IS = 28A, VGS = 0V
i48 ns TJ = 25°C, IF =28A
99 nC di/dt = 300A/μs
Notes:
‡ Pulse width 400μs; duty cycle 2%.
2 www.irf.com © 2013 International Rectifier
March 21, 2013
Free Datasheet http://www.Datasheet4U.com

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