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IRF6810STRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6810STRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF6810STRPBF?> डेटा पत्रक पीडीएफ

IRF6810STRPBF pdf
IRF6810STRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.1
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
182
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS
Continuous Source Current
(Body Diode)
–––
ÃgISM Pulsed Source Current
(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
22
4.0
5.6
1.6
-5.9
–––
–––
–––
–––
–––
7.4
1.6
0.98
2.7
2.1
3.68
8.9
0.4
8.2
22
11
4.8
1038
325
74
Typ.
–––
–––
–––
12
8.4
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
––– mV/°C Reference to 25°C, ID = 1mA
i5.2
i7.3
mΩ
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 13A
2.1
–––
V
mV/°C
VDS
=
VGS,
ID
=
25μA
1.0
150
100
-100
μA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA
VGS = 16V
VGS = -16V
––– S VDS = 13V, ID =13A
11
––– VDS = 13V
–––
–––
nC
VGS = 4.5V
ID = 13A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
ÃiΩ
––– VDD = 13V, VGS = 4.5V
–––
–––
ns
ID = 13A
RG= 1.8Ω
–––
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
16
MOSFET symbol
A showing the
D
130
integral reverse
p-n junction diode.
G
S
i1.0 V TJ = 25°C, IS = 13A, VGS = 0V
i18 ns TJ = 25°C, IF =13A
13 nC di/dt = 280A/μs
Notes:
‡ Pulse width 400μs; duty cycle 2%.
2
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