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IRF6729MTRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6729MTRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF6729MTRPBF pdf
IRF6729MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
120
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
4.0
1.4
2.2
1.8
-4.2
–––
–––
–––
–––
–––
42
11
4.9
14
12.1
18.9
29
1.3
22
37
20
15
6030
1360
560
Typ.
–––
–––
–––
30
40
Max. Units
Conditions
–––
–––
1.8
2.7
2.35
–––
100
5.0
100
-100
–––
V VGS = 0V, ID = 1.0mA
mV/°C Reference to 25°C, ID = 10mA
imVGS = 10V, ID = 31A
iVGS = 4.5V, ID = 25A
V VDS = VGS, ID = 150µA
mV/°C VDS = VGS, ID = 10mA
µA VDS = 24V, VGS = 0V
mA VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 25A
63
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 25A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
Ãi2.2
––– VDD = 15V, VGS = 4.5V
––– ns ID = 25A
––– RG = 1.8
––– See Fig. 17
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Max. Units
Conditions
31 MOSFET symbol
A showing the
250 integral reverse
0.80
p-n junction diode.
iV TJ = 25°C, IS = 25A, VGS = 0V
i45 ns TJ = 25°C, IF = 25A
60 nC di/dt = 300A/µs
Notes:
‡ Pulse width 400µs; duty cycle 2%.
2
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