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IRF6728MPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6728MPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF6728MPBF?> डेटा पत्रक पीडीएफ

IRF6728MPBF pdf
IRF6728MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
61
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
2.7
1.8
2.8
1.8
-4.8
–––
–––
–––
–––
–––
28
6.5
3.1
8.7
9.7
11.8
22
1.3
16
34
19
19
4110
970
340
Typ.
–––
–––
0.7
21
29
Max. Units
Conditions
–––
–––
2.5
3.6
2.35
–––
500
5.0
100
-100
–––
42
V VGS = 0V, ID = 1.0mA
mV/°C Reference to 25°C, ID = 6mA
imΩ VGS = 10V, ID = 23A
iVGS = 4.5V, ID = 18A
V VDS = VGS, ID = 100μA
mV/°C VDS = VGS, ID = 10mA
μA VDS = 24V, VGS = 0V
mA VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 18A
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 18A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
Ãi––– VDD = 15V, VGS = 4.5V
––– ns ID = 18A
––– RG = 1.8Ω
––– See Fig. 17
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Max. Units
Conditions
23 MOSFET symbol
D
A showing the
180
integral reverse
G
0.75
32
44
p-n junction diode.
S
iV TJ = 25°C, IS = 18A, VGS = 0V
ns TJ = 25°C, IF = 18A
inC di/dt = 300A/μs
Notes:
‡ Pulse width 400μs; duty cycle 2%.
2 www.irf.com
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