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IRF6711STRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6711STRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF6711STRPBF?> डेटा पत्रक पीडीएफ

IRF6711STRPBF pdf
IRF6711SPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
78
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS
Continuous Source Current
(Body Diode)
–––
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
19
3.0
5.2
1.8
-6.4
–––
–––
–––
–––
–––
13
3.1
1.8
4.4
3.7
6.2
9.5
0.4
7.7
13
7.1
5.4
1810
470
210
Typ.
–––
–––
–––
17
21
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
i3.8
i6.5
m
VGS = 10V, ID = 19A
VGS = 4.5V, ID = 15A
2.35
–––
V
mV/°C
VDS
=
VGS,
ID
=
25µA
1.0
150
100
-100
–––
µA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 13V, ID = 15A
20
––– VDS = 13V
–––
–––
nC
VGS = 4.5V
ID = 15A
––– See Fig.2, 15
–––
––– nC VDS = 16V, VGS = 0V
Ãi–––
––– VDD = 13V, VGS = 4.5V
–––
–––
ns
ID = 15A
RG = 1.5
––– See Fig. 17
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
52
150
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
i1.0 V TJ = 25°C, IS = 15A, VGS = 0V
i26 ns TJ = 25°C, IF = 15A
32 nC di/dt = 370A/µs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400µs; duty cycle 2%.
2
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