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IRF6709S2TR1PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6709S2TR1PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF6709S2TR1PBF pdf
IRF6709S2TR/TR1PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
19
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
19
5.9
10.1
1.8
-7.2
–––
–––
–––
–––
–––
8.1
1.9
1.1
2.8
2.3
3.9
4.6
3.2
8.4
25
9.1
9.5
1010
340
140
Typ.
–––
–––
–––
15
9.3
Max. Units
Conditions
–––
–––
7.8
13.5
2.35
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
imVGS = 10V, ID = 12A
iVGS = 4.5V, ID = 10A
V VDS = VGS, ID = 25µA
––– mV/°C
1.0
150
100
-100
–––
µA VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 13V, ID =10A
12
––– VDS = 13V
––– nC VGS = 4.5V
––– ID = 10A
––– See Fig. 18
–––
––– nC VDS = 10V, VGS = 0V
–––
Ãi––– VDD = 13V, VGS = 4.5V
––– ID = 10A
––– ns RG= 6.2
–––
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
26 MOSFET symbol
A showing the
100 integral reverse
p-n junction diode.
i1.0 V TJ = 25°C, IS = 10A, VGS = 0V
i23 ns TJ = 25°C, IF =10A
14 nC di/dt = 200A/µs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400µs; duty cycle 2%.
2
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