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IRF6691TRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6691TRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF6691TRPBF pdf
IRF6691PbF
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
–––
–––
VGS(th)
VGS(th)/TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.6
–––
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
110
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
12
1.8
1.2
–––
-4.1
–––
–––
–––
–––
–––
–––
47
14
4.4
15
14
19
30
0.60
23
95
25
10
6580
2070
840
Typ.
–––
–––
–––
32
26
Max.
–––
–––
2.5
1.8
2.5
–––
1.4
500
5
100
-100
–––
71
–––
–––
–––
–––
–––
–––
1.5
–––
–––
–––
–––
–––
–––
–––
Units
V
mV/°C
m
V
mV/°C
mA
µA
mA
nA
S
Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 10mA
iVGS = 4.5V, ID = 12A
iVGS = 10V, ID = 15A
VDS = VGS, ID = 250µA
ID = 10mA, reference to 25°C
VDS = 20V, VGS = 0V
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
VDS = 10V, ID = 26A
VDS = 10V
nC VGS = 4.5V
ID = 17A
See Fig. 14
nC VDS = 10V, VGS = 0V
Ãi
VDD = 16V, VGS = 4.5V
ns ID = 26A
Clamped Inductive Load
See Fig. 15 & 16
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Max.
j200
260
0.65
48
39
Units
Conditions
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
iV TJ = 25°C, IS = 25A, VGS = 0V
ns TJ = 25°C, IF = 25A
nC di/dt = 100A/µs See Fig. 17
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400µs; duty cycle 2%.
ˆ Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 150A.
2
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