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IRF6674TRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6674TRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF6674TRPBF pdf
IRF6674TRPbF
Electrical Characteristic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
60 ––– –––
V VGS = 0V, ID = 250μA
––– 0.07 ––– V/°C Reference to 25°C, ID = 1mA
––– 9.0 11 mΩ VGS = 10V, ID = 13.4A i
3.0 4.0 4.9
V VDS = VGS, ID = 100μA
––– -11 ––– mV/°C
––– ––– 20
μA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 125°C
––– ––– 100
nA VGS = 20V
––– ––– -100
VGS = -20V
16 ––– –––
S VDS = 25V, ID = 13.4A
––– 24
36
––– 5.4 –––
VDS = 30V
––– 1.9 ––– nC VGS = 10V
––– 8.3 12
ID = 13.4A
––– 8.4 –––
See Fig. 15
––– 10.2 –––
––– 14 ––– nC VDS = 16V, VGS = 0V
––– 1.0 –––
––– 7.0 –––
––– 12 –––
––– 12 –––
––– 8.7 –––
Ω
VDD = 30V, VGS = 10V i
ID = 13.4A
ns RG = 6.2 Ω
––– 1350 –––
––– 390 –––
––– 105 –––
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
––– 1580 –––
––– 290 –––
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 48V, f=1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode) TJ= 25°C
ISM Pulsed Source Current
(Body Diode) g
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 67
––– ––– 134
––– –––
––– 32
––– 36
1.3
48
54
MOSFET symbol
A showing the
D
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 13.4A, VGS = 0V i
ns TJ = 25°C, IF = 13.4A, VDD = 50V
nC di/dt = 100A/μs c
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400μs; duty cycle 2%.
2
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