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IRF6637PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6637PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF6637PBF?> डेटा पत्रक पीडीएफ

IRF6637PBF pdf
IRF6637PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
38
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
(Body Diode) g
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
26
5.7
8.2
1.8
-5.4
–––
–––
–––
–––
–––
11
3.1
1.0
4.0
2.9
5.0
9.9
1.2
12
15
14
3.8
1330
430
150
Typ.
–––
–––
–––
13
20
Max. Units
Conditions
–––
–––
7.7
10.8
2.35
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 14A i
VGS = 4.5V, ID = 11A i
V VDS = VGS, ID = 250µA
mV/°C
1.0
150
100
-100
–––
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 11A
17
––– VDS = 15V
––– nC VGS = 4.5V
6.0 ID = 11A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
–––
––– VDD = 16V, VGS = 4.5V i
––– ID = 11A
––– ns Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Max. Units
Conditions
53 MOSFET symbol
A showing the
110 integral reverse
p-n junction diode.
1.0 V TJ = 25°C, IS = 11A, VGS = 0V i
20 ns TJ = 25°C, IF = 11A
30 nC di/dt = 500A/µs i
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400µs; duty cycle 2%.
2
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